Adsorbates as a charge-carrier reservoir for electrostatic carrier doping to graphene
نویسندگان
چکیده
منابع مشابه
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette, Jack Y. Zhang, Dmitri O. Klenov, Anderson Janotti, Chris G. Van de Walle, Siddharth Rajan, S. James Allen, and Susanne Stemmer Materials Department, University of California, Santa Barbara, California, 93106-5050, USA Department of Physics, University of California, Santa Barbara, California, 93106-9530, USA FEI, Achtseweg Noord 5, 5651 GG Ein...
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1 Hysteresis eects All the I SD-V G plots of our devices were accompanied by hysteresis. Fig. S1 (a) shows the channel current of Sample C as a function of gate voltage V G for V SD = 5 V. An increase in V G to 40 V is accompanied by monotonic increase in I SD from ∼1 nA to ∼100 µA. However, with decreasing V G from 40 V to zero (sequence 6-7-8), the current exhibited a hysteresis. The remnant ...
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2019
ISSN: 1882-0778,1882-0786
DOI: 10.7567/1882-0786/ab5e0b